PART |
Description |
Maker |
LC74FCT162245T LC74FCT16425T LC74FCT16245T |
Sensor and Timers Devices: Computer peripheral component driver CMOS LSI
|
Sanyo
|
ULA6710 ULY7710 |
8-bit MCU with single voltage Flash memory, ADC, 16-bit timers, SPI, SCI interfaces DSM (digital signal processor system memory) for analog devices ADSP-218X family (5 V supply) Komparator
|
Ultra CEMI
|
A122012 A1221 A1222 |
The A1220, A1221, A1222, and A1223 Hall-effect sensor ICs are extremely temperature-stable and stress-resistant devices especially suited for operation over extended temperature ranges to 150°C.
|
Allegro MicroSystems
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
P1804U P3100SCMC P3100SD A2106Z P2103A P2103ACMC P |
SIDACtor devices solid state crowbar devices
|
TECCOR [Teccor Electronics] TECCOR[Teccor Electronics]
|
TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
SRP420 |
PolySwitch垄莽PTC Devices PolySwitch?PTC Devices
|
Tyco Electronics
|
SMD260 |
PolySwitch垄莽PTC Devices PolySwitch?PTC Devices
|
Tyco Electronics
|
MICROSMD110 |
PolySwitch垄莽PTC Devices PolySwitch?PTC Devices
|
Tyco Electronics
|
MINISMDC110 |
PolySwitch垄莽PTC Devices PolySwitch?PTC Devices
|
Tyco Electronics
|
TRF250-120T-B-0.5 |
PolySwitch垄莽PTC Devices PolySwitch?PTC Devices
|
Tyco Electronics
|
|